Silicon Sputtering Target
We supply planar rotary silicon sputtering targets, P type and N type are all available, the purity can up to 6N, the biggest size is 11”. We also supply sprayed rotary silicon sputtering targets, the length can up to 4000mm.
type: poly-crystalline or mono-crystalline
Growth method: Czochralski (CZ)
conductivity type: P type (Boron doped) & N type (phosphorus doped)
specific resistance:0.005-0.02 ohm.cm
10 ohm.cm min
Planeness (TIR): < 1.2μm
Partial planeness (STIR): <0.3μm
ApplicationSilicon sputtering target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other dielectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which is widely applied to the field of LCD transparent conducting glass, LOW-E building glass and micro-electronics.
If you are interested, pls email us your specification for a best quotation.