We produce copper inum gallium selenium thin film solar cell preset layer by alternate sputtering, and control the sputtering time for by alternating sputtering. Through the power controller with variable duty ratio, the sputtering time for Cu/Ga alloy target and In tWe produce copper indium gallium selenium thin film solar cell preset layer by alternate sputtering, and control the sputtering time by alternating sputtering. Through the power controller with variable duty ratio, the sputtering time for copper gallium alloy target and indium target by variable duty cycle power controller, so as to control of the final element ratio. In a sputtering cycle, the largest influence on the final composition is the sputtering time of copper gallium alloy target, next is indium target, and the non-sputtering time will also affect the composition. by XRD test, we know that the alloy phase of copper indium gallium selenium preset layer is mainly Cu11In89 , The CIGS thin film solar cell produced by "sputtering metal prefabricated layer selenized and vulcanized" is the second generation of photovoltaic with the most advanced technology and the most mature industrial production of the CIGS thin film is the direct band gap compound semiconductor material, which is composed of copper, indium, gallium, selenium and other metal elements, its visible light absorption coefficient is the highest of all thin film battery materials, but the consumption of raw materials is far lower than the traditional crystal silicon solar cell. Compared with high efficiency and high cost crystal silicon solar cell and low efficiency and low cost amorphous silicon solar cell, CIGS thin film solar cell has multiple advantages of high efficiency, low cost ,long life, which is the most efficient thin-film solar cell with the best hope to reduce the cost of photovoltaic power generation, and it can make full use of the rich resources of indium in China, It is a renewable energy technology that is truly in line with the encouragement provisions of national laws and regulations and suitable for China's national conditions, and it has the broad development prospect .

The following image shows the microscopic metallographic examination of the copper indium alloy sputtering target , with the average particle size <100 microns.

Advantages of copper indium alloy sputtering target
We produce high purity copper indium alloy sputtering targets. Its biggest advantage is that in the physical vapor deposition process, it can obtain films with excellent conductivity and minimized particles.