The tantalum sputtering target is composed of high-purity steel gray tantalum metal. Tantalum is a bluish-gray glossy transition metal with high corrosion resistance. It is part of the refractory metal category and is widely used as a minor component in alloys. Tantalum is dark (blue-gray), dense, ductile, very hard, easy to manufacture, and has high thermal and electrical conductivity. This metal is known for its resistance to acid corrosion. In fact, at temperatures below 150°C, tantalum is almost completely immune to normal aqua regia.
Tantalum Sputtering Target is produced by EB melting. It's usually applied for magnetic recording media, printer components, flat panel displays, optic, industrial glass, and thin film resistors. High purity Tantalum Sputtering Target is normally used for semiconductor industry. its high natural strength with low thermal expansion coefficient, together with its ability to stick to both copper and silicon make it the perfect choice for a diffusion barrier to prevent copper and silicon from interacting.
XK is a professional producer of Tantalum sputtering targets with various shapes and purity, which are mainly applied to semi-conductive & micro-electronics industry. Thanks to our special forming processes, our Tantalum sputtering targets possess higher density, smaller average particle size as well as higher purity, so that you can benefit from a faster process due to higher sputtering speed and obtain very homogeneous Tantalum layers.
The microstructure can be adjusted by our flexibility production process, to achieve your desired effect. If the grains of the sputtering target are uniformly aligned, the user can benefit from constant erosion rates and homogeneous layers. Following are two micrographs of our tantalum sputtering target, the average grain size＜100μm.
The chemical purity is crucial to a metal sputtering target, if the purity is higher, the films will possess a more outstanding level of electrical conductivity and minimized particle formation during the PVD process. Following is a typically Certificate of analysis for 3N5 tantalum sputtering target.
1. Metallic elements were analyzed by GDMS and ICP-OES.
2. Gas elements were analyzed by LECO.
Preparation process of tantalum sputtering target
Preparation-Sintering-Vacuum Electron Beam Melting-Plastic Deformation-Annealing-Metallographic Inspection-Machining-Dimensional Inspection-Cleaning-Final Inspection-Packaging
Tantalum sputtering target and preparation method thereof
The manufacturing method is basically that high-purity tantalum powder is first sintered into a block, and then a high-purity tantalum ingot is obtained through a high-vacuum electron beam melting furnace, and then the tantalum ingot is repeatedly plastically deformed and annealed to obtain a uniform crystal grain and a certain internal texture Tantalum target blank, the target blank is welded to the back plate and processed by machining to form the final product. In such a manufacturing method, the high-purity tantalum powder needs to be sintered into a block first, then smelted into an ingot by a high vacuum electron beam, and then subjected to repeated plastic deformation and annealing to finally obtain a sputtering target that can be used for the production of semiconductors. The target blank.
Other alloy forms of tantalum sputtering target
Tantalum tungsten, tantalum niobium, tantalum aluminum, tantalum silicon, tantalum hafnium alloy sputtering target, etc.