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Copper Indium Gallium Sputtering Target

CIG target,sputtering target,s

Product Name

Copper Indium Gallium Sputtering Target

Element Symbol

Cu + In +Ga

Purity

4N, 5N

Availble Shape

Planar target, Rotary target


Process


Micrograph

The flexibility of our production process allows to adjust the microstructure of our coating material to achieve your desired effect. If the grains of the sputtering target are uniformly aligned, the user can benefit from constant erosion rates and homogeneous layers. The picture below are two micrographs of our Copper Indium Gallium (50/35/15wt%) alloy sputtering target, the average grain size<100μm.
              
 











Analysis

The sputtering targets we produced are high purity, it’s most important benefits are that your films possess an outstanding level of electrical conductivity and minimized particle formation during the PVD process. Below form is a typically Certificate of analysis for 4N high purity Copper Indium Gallium (50/35/15wt%) alloy sputtering target.
Analytical Methods: 1. Metallic elements were analyzed using ICP-OES. 2. Gas elements were analyzed using LECO. 




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